Hematite iron oxide (a - Fe2O3) was synthesized through the process called Horizontal Vapor Phase Growth (HVPG) with and without silicon substrate. Though the source material had a purity rate of 97.60%, it did not inhibit the growth of nanomaterials. The HVPG technique was able to isolate the impurities specifically at zone 3 with the intended nanomaterial products grown at zone 2 which made the synthesis distinctive in its purpose. The growth temperature was varied at 900o C, 1000o C, 1100o C and 1200o C with dwell times of 4, 6, and 8 hours respectively. Nanomaterials without substrate revealed hexagonal nanoplates with an average thickness of 70 nm grown at 1100ÂºC for 8 hours. Energy Dispersive X-ray (EDX) obtained from the nanomaterial without substrate shows an atomic percentage of 25.56 % Fe, 12.75% Si, and 61.70% O. The iron oxide formed was indeed hematite and was also consistent with the elemental ratio of Fe, O, and Si of 2:5:1. Silicon was included in the analysis due to the silicate composition of the quartz tube. For samples grown on silicon substrate, hexagonal nanoplates were also observed with an average thickness of 80 nm grown at 1000ÂºC for 8 hours. Results from EDX showed a stoichiometric ratio of 40% Fe and 60% O indicating that the nanomaterial formed was indeed a - Fe2O3. The crystal structure of the nanomaterial exhibited a low intensity X-ray Diffraction (XRD) brought about by the random direction of the samples though an XRD peak was obtained at 41Âº with a plane of index of (311).